Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: MG12300D-BN2MM Series 1200 V 300 A surface mount dual IGBT module18851+$1405.369910+$1392.593825+$1386.205850+$1379.8177100+$1373.4297150+$1367.0416250+$1360.6536500+$1354.2655 -
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Category: IGBTtransistorDescription: LITTELFUSE MG12150S-BN2MM IGBT Array & Module Transistor, Dual NPN, 200A, 1.7V, 625W, 1.2kV, Module21851+$824.956410+$796.010650+$792.3924100+$788.7741150+$782.9850250+$777.9195500+$772.85391000+$767.0648 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1700V 125A 520000mW Medical 7Pin Bulk44531+$546.923910+$532.656350+$521.7178100+$517.9132200+$515.0596500+$511.25501000+$508.87702000+$506.4991 -
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Category: IGBTtransistorDescription: LITTELFUSE MG12150D-BA1MM IGBT Array & Module Transistor, Dual NPN, 210A, 1.8V, 1.1kW, 1.2kV, Module82181+$853.659410+$823.706450+$819.9623100+$816.2182150+$810.2276250+$804.9858500+$799.74401000+$793.7534 -
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Category: IGBTtransistorDescription: IGBT Discrete, On Semiconductor Insulated Gate Bipolar Transistor (IGBT), used for motor drivers and other high current switching applications. ###IGBT discrete, On Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.1292 -
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Category: IGBTtransistorDescription: IGBT Discrete, On Semiconductor Insulated Gate Bipolar Transistor (IGBT), used for motor drivers and other high current switching applications. ###IGBT discrete, On Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.5347 -
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Category: IGBTtransistorDescription: LITTELFUSE MG1275S-BA1MM IGBT Array & Module Transistor, Dual NPN, 105A, 1.8V, 630W, 1.2kV, Module5007 -
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Category: IGBTtransistorDescription: LITTELFUSE MG12300WB-BN2MM IGBT Array & Module Transistor, Dual NPN, 500A, 1.7V, 1.4kW, 1.2kV, Module9849 -
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Category: IGBTtransistorDescription: MG12300D-BN3MM Series 1200 V 300 A surface mount dual IGBT module5566 -
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Category: IGBTtransistorDescription: LITTELFUSE MG12200D-BN2MM IGBT Array & Module Transistor, Dual NPN, 290A, 1.7V, 1.05kW, 1.2kV, Module7192 -
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Category: IGBTtransistorDescription: LITTELFUSE MG06600WB-BN4MM IGBT Array & Module Transistor, Dual NPN, 700A, 1.45V, 1.5kW, 600V, Module5546 -
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Category: IGBTtransistorDescription: IGBT 模块，Littelfuse 超低损耗 非常坚固 高短路能力 正温度系数 在电动机驱动、反相器、直流/直流转换器、SMPS 和 UPS 中应用 ### IGBT（绝缘栅双极型晶体管）分立和模块 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。8995 -
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Category: IGBTtransistorDescription: LITTELFUSE MG06100S-BR1MM IGBT Array & Module Transistor, Dual NPN, 150A, 1.9V, 625W, 600V, Module4403 -
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Category: IGBTtransistorDescription: LITTELFUSE MG0675S-BN4MM IGBT Array & Module Transistor, Dual NPN, 100A, 1.45V, 250W, 600V, Module8460 -
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Category: IGBTtransistorDescription: LITTELFUSE MG12225WB-BN2MM IGBT Array & Module Transistor, Dual NPN, 325A, 1.7V, 1.05kW, 1.2kV, Module2544 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1700V 150A 690000mW Medical 7Pin Bulk1513 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1700V 400A 1450000mW Medical 7Pin Bulk5405 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1700V 300A 1250000mW Medical 7Pin Bulk2740 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1700V 75A 320000mW Medical 7Pin Bulk7269
